The AM8 series was specifically designed for RF jamming, but has since been used in a variety of other applications. With wideband instantaneous power in a compact outline suitable for installation in fixed, mobile and portable systems, these amplifiers utilise the very latest GaN semiconductor devices to achieve unrivalled performance. Supplied in modular form for OEM system integration. See model listings in the Wideband GaN section of the Products by Applications menu.
Typical Specifications
- Frequency Range : 20 – 520MHz
- Small Signal Gain : 50dB min
- Gain Flatness : 3dB p-p max, 2dB typ
- RF Input Drive for rated Output : 0dBm nom
- RF Input Drive (survival) : +15dBm max
- Saturated Output Power : 50W 80W & 100W
- Flatness @ Psat : 2.5dB p-p max, 2dB typ
- Output Power @ 1dB GCP : +48dBm typ
- Harmonics : -13dBc typ 20-200MHz, -20dBc typ 200-520MHz
- Non-Harmonic Spurious : -80dBc min
- Input Return Loss : 10dB min, 14dB typ
- Output Return Loss : 10dB min, 14dB typ
- Power Supply : +28V DC
- Efficiency: 40% typ
- Dimensions (LWH) : 220 × 100 × 34mm excl conns
- Weight : 1.4Kg
Protection Features
- Reverse power protection
- Reverse polarity protection
- Over temperature protection
- Rugged milled enclosure
Controls & Monitors
- TTL control forward power detector
- RF output status monitor
- Current monitor output
- Temp monitor output
- TTL control line
Options
- SMA/N type RF connectors
- Heatsinks with/without fan cooling
- Passivated/painted finishes
- Extended/narrow bandwidths
