Utilising the latest GaN power transistor technology, the AM59 series amplifier is designed for high efficiency pulsed power. With fast rise times & low pulse distortion the amplifier is ideally suited to applications in high-energy physics, typically as drivers for Klystron tubes. A control line is provided for remote operation, whilst RF samples of forward and reflected power are available for monitoring. Protection circuits are incorporated to ensure safety and long-term reliability. Available in modular form for OEM system integration, and with integral air-cooling.
Specifications
- Frequency Coverage : 1-4GHz
- Peak Output Power : >+63dBm typ
- Input Drive for rated Output : 0dBm
- RF Input Drive (Survival): +20dBm (CW)
- Duty Cycle : 5% max
- Input Pulse Width : 100uS max
- Amplitude Droop : 0.1dB typ in 10uS, 1dB max in 100uS
- RF Rise/Fall Time : 100nS max
- Harmonics : -40dBc min
- Non-Harmonic Spurious : -80dBc min
- Input Return Loss : 14dB min, 17dB typ
- Output Return Loss : 14dB min, 17dB typ
- Fwd & Rev RF Monitors : -30dBc +/-1dB
- TTL Control : High = OFF, transition time 5uS max, 3uS typ
- Power Supply : +50V DC, -8V DC,
- Standby Current : 100mA nom
- Efficiency : 45% nom
- Case Temp Range : -10 to 75C
- RF Connectors : SMA/N Female
- Dimensions LWH : 320x180x50mm (102mm with heatsink)
Features
- Unconditional stability
- Reverse polarity protection
- Reverse power protection (integral circulator with dummy load)
- Over temp protection & alarm
- Duty limiter
- TTL blanking with capacitive coupling
- Alodine passivation finish
