Radar-power-modules - AM10/2.7-3.1-55-55---Pulsed-Power

Utilising the latest GaN & LDMOS transistor technology, AM10 amplifiers are designed for high efficiency applications. This S-band model is suitable for operation with pulsed signals up to 10% duty. Mechanically robust and with protection circuits to ensure long-term reliability, the amplifier is supplied in modular form for OEM system integration.

Specifications

• Frequency Coverage : 2.7 to 3.1GHz
• Peak Output Power : +55dBm min, +56dBm typ
• Peak Output Power Flatness : 1dB p-p max
• Input Drive for rated Output : 0dBm
• RF Input Drive (Survival): +15dBm (CW)
• Duty Cycle : 10% max
• Input Pulse Width : 200uS max
• Amplitude Droop : 0.2dB max in 10uS, 0.8dB max in 200uS
• Harmonics : -50dBc min
• Non-Harmonic Spurious : -80dBc min
• Input Return Loss : 14dB min, 17dB typ
• Input Return Loss : 17dB min, 19dB typ
• Fwd & Rev RF Monitors : -30dBc +/-1dB
• TTL Control : High = OFF, transition time 5uS max
• Power Supply : +50V DC, -8V DC,
• Standby Current : 100mA nom
• Efficiency : 45% nom
• Case Temp Range : -10 to 75C
• RF Connectors : SMA/N Female
• Dimensions LWH : 250x120x50mm

Features

• Unconditional stability
• Reverse polarity protection
• Reverse power protection (integral circulator with dummy load)
• Over temp protection & alarm
• Duty limiter
• TTL blanking with capacitive coupling
• Alodine passivation finish