MALtd

AM8

Jon — Wed, 18 Apr 2012 11:25:51 +0000

The AM8 series is specifically designed for RF jamming. With wideband instantaneous power in a compact outline suitable for installation in fixed, mobile and portable systems, these amplifiers utilise the very latest GaN semiconductor devices to achieve unrivalled performance. Supplied in modular form for OEM system integration.

Specifications

Frequency Range : 20 – 520MHz
Small Signal Gain : 50dB min
Gain Flatness : 3dB p-p max, 2dB typ
RF Input Drive for rated Output : 0dBm nom
RF Input Drive (survival) : +15dBm max
Saturated Output Power : 80W & 100W
Flatness @ Psat : 2.5dB p-p max, 2dB typ
Output Power @ 1dB GCP : +48dBm typ
Harmonics : -13dBc typ 20-200MHz, -20dBc typ 200-520MHz
Non-Harmonic Spurious : -80dBc min
Input Return Loss : 10dB min, 14dB typ
Output Return Loss : 10dB min, 14dB typ
Power Supply : +28V DC, 9A typ @ 100w O/P
Efficiency @ 100w O/P : 40% typ
Dimensions (LWH) : 220 × 100 × 34mm excl conns
Weight : 1.4Kg

Protection Features

Reverse power protection
Reverse polarity protection
Over temperature protection
Rugged milled enclosure

Controls & Monitors

TTL control forward power detector
RF output status monitor
Current monitor output
Temp monitor output
TTL control line

Options

SMA/N type RF connectors
Heatsinks with/without fan cooling
Passivated/painted finishes
Extended/narrow bandwidths

AM8-20-520-50-50 (copy)

Jon — Wed, 18 Apr 2012 11:25:26 +0000

Specifications

Frequency Range : 20 – 520MHz
Small Signal Gain : 50dB min
Gain Flatness : 3dB p-p max, 2dB typ
RF Input Drive for rated Output : 0dBm nom
RF Input Drive (survival) : +15dBm max
Saturated Output Power : +49.5dBm min, +50dBm typ
Flatness @ Psat : 2.5dB p-p max, 2dB typ
Output Power @ 1dB GCP : +48dBm typ
Harmonics : -13dBc typ 20-200MHz, -20dBc typ 200-520MHz
Non-Harmonic Spurious : -80dBc min
Input Return Loss : 10dB min, 14dB typ
Output Return Loss : 10dB min, 14dB typ
Power Supply : +28V DC, 9A typ @ 100w O/P
Efficiency @ 100w O/P : 40% typ
Dimensions (LWH) : 220 × 100 × 34mm excl conns
Weight : 1.4Kg

Protection Features

Reverse power protection
Reverse polarity protection
Over temperature protection
Rugged milled enclosure

Controls & Monitors

TTL control forward power detector
RF output status monitor
Current monitor output
Temp monitor output
TTL control line

Options

SMA/N type RF connectors
Heatsinks with/without fan cooling
Passivated/painted finishes
Extended/narrow bandwidths

AM4

Jon — Wed, 18 Apr 2012 11:01:10 +0000

The AM4 series amplifiers are specifically designed for RF jamming. With wideband instantaneous power in a compact outline suitable for installation in fixed, mobile and portable systems, these amplifiers utilise the very latest GaN semiconductor devices to achieve unrivalled performance. Supplied in modular form for OEM system integration and in compact bench top instrument form for testing applications. See “Wideband Gan” in Products by Applications menu for more details

Specifications

Frequency Ranges available : 20-520MHz, 20-1000MHz, 500-2500MHz, 2.5-6GHz
Bandwidth : Full instantaneous
Gain Range : 42-48dB
Gain Flatness : 3dB p-p max
Noise Figure : 8dB typ
VSWR : 1.5:1 max input, 2:1 output
Output Power : 25W
Power Supply : +28V DC
Operating Temp Range : -10 to 60C
Connectors : SMA Female
Dimensions (LWH) : 160×90×28mm

Protection Features

Withstands full reflected power
Reverse polarity protection
Over temperature protection
Integrated regulated power supply

Controls & Monitors

TTL control

AM9

Jon — Wed, 18 Apr 2012 10:56:08 +0000

The AM9 series is specifically designed for RF jamming. With wideband instantaneous power in a compact outline suitable for installation in fixed, mobile and portable systems, these amplifiers utilise the very latest GaN semiconductor devices to achieve unrivalled performance. Supplied in modular form for OEM system integration.

Specifications

Frequency Range : 2 – 6GHz
Small Signal Gain : 55dB min
Gain Flatness : 4dB p-p max, 3dB typ
RF Input Drive for rated Output : 0dBm nom
RF Input Drive (survival) : +15dBm max
Saturated Output Power : +49.5dBm min, +50dBm typ
Flatness @ Psat : 2dB p-p max, 1dB typ
Non-Harmonic Spurious : -80dBc min
Input Return Loss : 10dB min, 14dB typ
Output Return Loss : 10dB min, 14dB typ
Power Supply : +28V DC, 17A typ @ 90w O/P
Efficiency @ 90w O/P : 20% typ
Dimensions (LWH) : 300 × 120 × 45mm excl conns
Weight : 2Kg nom

Protection Features

Reverse power protection
Reverse polarity protection
Over temperature protection
Rugged milled enclosure

Controls & Monitors

TTL control
RF output status monitor
Reverse power alarm
Over temp alarm
Fault override

Options

SMA/N type RF connectors
Heatsinks with/without fan cooling
Passivated/painted finishes
Extended/narrow bandwidths

AM5

Jon — Wed, 18 Apr 2012 10:46:21 +0000

The AM5 series amplifiers are specifically designed for RF jamming. With wideband instantaneous power in a compact outline suitable for installation in fixed, mobile and portable systems, these amplifiers utilise the very latest GaN semiconductor devices to achieve unrivalled performance. Supplied in modular form for OEM system integration. See “Wideband Gan” in Products by Applications menu for more details

Specifications

Frequency Coverage : 2-6GHz
Typical Bandwidth : Full instantaneous
Gain Range : 48dB
Gain Flatness : 3dB p-p max
Noise Figure : 8dB typ
VSWR : 1.5:1 max input, 2:1 output
Output Power : +40w 50w
Power Supply : +28V DC
Operating Temp Range : -10 to 60C
Connectors : SMA Female
Dimensions (LWH) : 200×100×28mm

Protection Features

Reverse power protection
Reverse polarity protection
Over temperature protection
Integrated regulated power supply

Controls & Monitors

TTL control Forward power detector
RF output status
Current monitor
Temp monitor

AM4-0.5-2.5-43-43R

Jon — Thu, 23 Feb 2012 13:42:27 +0000

Wideband instantaneous power in a compact bench-top form. Suitable for general purpose test & measurement applications, these amplifiers utilise the very latest GaN semiconductor devices to achieve excellent performance with robustness and reliability.

Specifications

Frequency Range : 0.5 – 2.5GHz
Small Signal Gain : 46dB min
Gain Flatness : 3dB p-p max, 2dB typ
RF Input Drive for rated Output : 0dBm nom
RF Input Drive (survival) : +15dBm max
Saturated Output Power : +43dBm min, +44dBm typ
Flatness @ Psat : 2dB p-p max, 1dB typ
Harmonics : -15dBc min, -12dBc typ
Non-Harmonic Spurious : -80dBc min
Input Return Loss : 10dB min, 14dB typ
Output Return Loss : 10dB typ @ Psat
Power Supply : 230V 50Hz AC
Dimensions (LWH) : 226 × 203 × 85mm
Weight : 3.5Kg

Protection Features

Reverse power protection
Over temperature protection

Controls & Monitors

AC power illuminated push switch
TTL control (option)

Options

N-type RF connectors
TTL control High = OFF. Rear panel BNC
Extended/narrow bandwidths

AM4-2.5-6-43-43

Jon — Thu, 23 Feb 2012 12:49:15 +0000

The AM4 series RF amplifier is specifically designed for jamming. With wideband instantaneous power in a compact outline suitable for installation in fixed, mobile and portable systems, these amplifiers utilise the very latest GaN semiconductor devices to achieve unrivalled performance. Supplied in modular form for OEM system integration.

Specifications

Frequency Range : 2.5-6GHz
Small Signal Gain : 43dB min
Gain Flatness : 2dB p-p max, 2dB typ
RF Input Drive for rated Output : +5dBm nom
RF Input Drive (survival) : +15dBm max
Saturated Output Power : +43dBm min, +44dBm typ
Flatness @ Psat : 2dB p-p max, 1dB typ
Harmonics : -15dBc min, -12dBc typ
Non-Harmonic Spurious : -80dBc min
Input Return Loss : 10dB min, 14dB typ
Output Return Loss : 10dB typ @ Psat
Power Supply : +28V DC, 3.3A max @ 20w O/P
Efficiency @ 20w O/P : 22% typ
Dimensions (LWH) : 160 × 90 × 28mm excl conns
Weight : 750g

Protection Features

Reverse power protection
Reverse polarity protection
Over temperature protection
Rugged milled enclosure

Controls & Monitors

TTL control

Options

SMA/N type RF connectors
Heatsinks with/without fan cooling
Passivated/painted finishes
Extended/narrow bandwidths

AM4-2.5-6-43-43R

Jon — Thu, 23 Feb 2012 12:46:19 +0000

Specifications

Frequency Range : 2.5 – 6GHz
Small Signal Gain : 43dB min
Gain Flatness : 3dB p-p max, 2dB typ
RF Input Drive for rated Output : +5dBm nom
RF Input Drive (survival) : +15dBm max
Saturated Output Power : +43dBm min, +44dBm typ
Flatness @ Psat : 2dB p-p max, 1dB typ
Harmonics : -15dBc min, -12dBc typ
Non-Harmonic Spurious : -80dBc min
Input Return Loss : 10dB min, 14dB typ
Output Return Loss : 10dB typ @ Psat
Power Supply : 230V 50Hz AC
Dimensions (LWH) : 226 × 203 × 85mm
Weight : 3.5Kg

Protection Features

Reverse power protection
Over temperature protection

Controls & Monitors

AC power illuminated push switch
TTL control (option)

Options

N-type RF connectors
TTL control High = OFF. Rear panel BNC
Extended/narrow bandwidths

100W 2-6GHz GaN Amplifier

Neil — Wed, 15 Feb 2012 15:02:16 +0000

Microwave Amps is proud to launch a Gallium Nitride, 100W, Wideband, 2 – 6GHz amplifier module. With this new addition to the wideband GaN family of products, we are now able to offer 100W from 20MHz to 6GHz in only 3 modules.

The main target for this module is the Electronic Counter Measures (ECM), and Jamming markets. This sector continues to grow and develop rapidy across the world, as the threat of global terrorism continues to be very real.

The New 100W capability allows ECM and Jamming system designers greater flexibility when specifying the requirements of their systems. The obvious advantage is the higher power which offers extended operational range to any system, but also the high power density allows a more compact system to be designed. See the Wideband GaN ECM section in the “Products by Application” drop-down.

[1] http://www.forecastinternational.com/press/release.cfm?article=222

AM9-2-6-50-50

Jon — Wed, 15 Feb 2012 14:08:07 +0000

Specifications

Frequency Range : 2 – 6GHz
Small Signal Gain : 55dB min
Gain Flatness : 4dB p-p max, 3dB typ
RF Input Drive for rated Output : 0dBm nom
RF Input Drive (survival) : +15dBm max
Saturated Output Power : +49.5dBm min, +50dBm typ
Flatness @ Psat : 2dB p-p max, 1dB typ
Non-Harmonic Spurious : -80dBc min
Input Return Loss : 10dB min, 14dB typ
Output Return Loss : 10dB min, 14dB typ
Power Supply : +28V DC, 17A typ @ 90w O/P
Efficiency @ 90w O/P : 20% typ
Dimensions (LWH) : 300 × 120 × 45mm excl conns
Weight : 2Kg nom

Protection Features

Reverse power protection
Reverse polarity protection
Over temperature protection
Rugged milled enclosure

Controls & Monitors

TTL control
RF output status monitor
Reverse power alarm
Over temp alarm
Fault override

Options

SMA/N type RF connectors
Heatsinks with/without fan cooling
Passivated/painted finishes
Extended/narrow bandwidths